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s u r f a c e m o u n t g e n e r a l p u r p o s e s i l i c o n r e c t i f i e r s r e v e r s e v o l t a g e - 5 0 t o 1 0 0 0 v f o r w a r d c u r r e n t - 2 a p i n n i n g pin 1 2 description cathode anode to p view marking code ? 2 a1-2a7 simplified outline sod-123fl and symbol 1 2 features %a for surface mounted applications %a low profile package %a glass passivated chip junction %a ideal for automated placement %a lead free in comply with eu rohs 2011/65/eu directives mechanical data %a case: sod-123fl %a terminals: solderable per mil-std-750, method 2026 %a approx. weight:15m g 0.0053oz ratings at 25 ambient temperature unless otherwise specified. single phase half-wave 60 hz, resistive or inductive load, for capacitive load current derate by 20 %. c maximum dc blocking voltage peak forward surge current 8.3 ms single half sine wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 2 a p a r a m e t e r maximum repetitive peak reverse voltage maximum rms voltage operating and storage temperature range maximum average forward rectified current at ta = 65 c maximum dc reverse current ta = 25 c at rated dc blocking voltage ta =125 c 1 ? typical junction capacitance 2 ? v rrm v rms v dc i f(av) i fsm v f i r 50 100 200 400 600 800 1000 v 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v 2 50 1.1 5 50 30 90 -55 ~ +150 a a v ?a pf c m a x i m u m r a t i n g s a n d e l e c t r i c a l c h a r a c t e r i s t i c s s 2 a w s 2 b w s 2 d w s 2 g w s 2 j w s 2 k w s 2 m w typical thermal resistance r ? ja measured at 1 mhz and applied r everse voltage o f 4 v d.c 2 ? 1 ? p.c.b. mounted with 0. 2 x 0.2" (5 x 5 mm) copper pad areas. c/w c j t, t j stg s y m b o l s u n i t s s 2 a w t h r u s 2 m w
0.5 0.6 0.8 0.9 1.0 1.1 f i g . 3 t y p i c a l f o r w a r d c h a r a c t e r i s t i c instaneous forward curren t (a) instaneous forwar d voltage (v) 0.7 2.0 t= 25 j c t=15 0 j c t=1 00 j c 1.0 1.5 f i g . 2 t y p i c a l i n s t a n e o u s r e v e r s e c h a r a c t e r i s t i c s instaneous current ( a) reverse ? 200 400 600 800 0 0.01 0.1 1.0 10 instaneous revers e voltage (v) 100 t=25 j c t=50 j c t=75 j c t=100 j c t=125 j c t=150 j c 25 50 75 100 125 150 175 average forward current (a) ambient temperature ( c) single phase half-wave 60 hz resistive or inductive load f i g . 1 f o r w a r d c u r r e n t d e r a t i n g c u r v e 0.5 1.0 1.5 2.0 2.5 0.0 f i g . 4 t y p i c a l j u n c t i o n c a p a c i t a n c e junction capacitance ( pf) 1.0 10 100 0.1 1 10 100 reverse voltage (v) t =25 j c 100lfm 10 20 30 40 50 60 00 10 100 f i g . 6 m a x i m u m n o n - r e p e t i t i v e p e a k f o r w a r d s u r a g e c u r r e n t peak a) forward surage current ( number of cycles 8.3 ms single half sine wave (jedec method) 1 s 2 a w t h r u s 2 m w
m a r k i n g type number marking code s2aw s2bw s2dw s2gw s2jw s2kw s2mw 2a1 2a2 2a3 2a4 2a5 2a6 2a7 p a c k a g e o u t l i n e p l a s t i c s u r f a c e m o u n t e d p a c k a g e ; 2 l e a d s s o d - 1 2 3 f l a a c " all round va m e unit mm 1.1 0.20 2.9 1.9 3.8 0.9 0.12 2.6 1.7 3.5 7 max min mil max min 43 35 7.9 4.7 114 102 75 67 150 138 acde h e " 1.1 0.8 43 31 e bottom view h e " all round e d e g pad pad to p view 0.9 0.7 35 28 g g t h e r e c o m m e n d e d m o u n t i n g p a d s i z e 2.0 (79) 1.2 (47) mm (mil) unit ? 1.2 (47) 1.2 (47) s 2 a w t h r u s 2 m w

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